Surface-emitting semiconductor laser
US6658034B2 · kind B2 · utility
29Cited by
5References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 13, 2000 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Oct 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18388
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser suitable for intra-cavity laser absorption spectroscopy and for telecommunication system comprises a Bragg mirror, a multiple quantum well active region and an anti-reflective coating together with a second mirror spaced from the coating to define an external cavity, the free spectral range of the sub-cavity defined by the coating and the active region being less than two times the bandwidth of the coating and the bandwidth of the Bragg mirror being at least as great as the free spectral range of the sub-cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.