Semiconductor device and manufacturing method therefor, circuit substrate, and electronic apparatus
US6660545B2 · kind B2 · utility
19Cited by
6References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | May 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and manufacturing method for a semiconductor device includes the steps of forming a penetration hole 50 in a semiconductor chip 10 having an electrode 14, and forming a conductive layer 70 in the region including the inside of the penetration hole 50. Regarding the penetration hole 50, an intermediate portion is formed to be larger than an open end portion, and the conductive layer 70 is formed by applying a coating of a liquid containing metal fine particles by an ink-jet method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.