Reduced surface charging in silicon-based devices
US6660552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B7/0012
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A grating light valve with reduced surface charging is disclosed. Surface charging is measured by the propensity an insulating surface to accept and transport a charge. The grating light valve of the instant invention has a plurality of spaced and movable ribbons formed from Si3N4 coupled to a substrate structure formed of SiO2. A portion of the ribbons are moved to alternate between conditions for constructive and destructive interference with an incident light source having a wavelength &lgr; by applying the appropriate switching voltages across the portion of ribbons and the substrate structure. When charging occurs on surfaces of the grating light valve, the switching voltages required to operate the grating light valve are shifted and diminishing the performance of the grating light valve. By drying silicon-based surfaces of the grating light valve and exposing the silicon-based surfaces of the grating light valve to a Nitrogen-rich pacify gas environment, the surfaces of the grating light valve exhibit reduced charging and consistent response to applied bias voltages. In the drying step, residual water or moisture is removed from the surfaces by elevating the temperature of t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.