Method for anodically bonding glass and semiconducting material together
US6660614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | May 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.