Method for reducing fluorine induced defects on a bonding pad surface
US6660624B2 · kind B2 · utility
10Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Feb 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing a fluorine contamination level on a semiconductor wafer process surface including providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer; reactive ion etching the process surface to include exposure of the process surface to a hydrofluorocarbon containing plasma; and heating the process surface according to a temperature profile to reduce a fluorine contamination level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.