Etching of semiconductor wafer edges
US6660643B1 · kind B1 · utility
7Cited by
19References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1999 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Mar 3, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.