Methods and apparatus for oxygen implantation
US6661014B2 · kind B2 · utility
7Cited by
5References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Mar 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3) at the operating temperatures of the ion source. Consequently, oxidation of the filament and other metal components of the arc chamber is limited, or even prevented. Thus, the invention can advantageously lead to longer filament lives as compared to certain conventional processes that generate oxygen plasmas using hot filament sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.