Low emitter resistance contacts to GaAs high speed HBT
US6661037B2 · kind B2 · utility
80Cited by
2References
45Claims
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Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
Abstract
A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipolar transistor to realize a lower contact resistance value to yield an improved cutoff frequency (fT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.