Image sensor and method for fabricating the same
US6661046B2 · kind B2 · utility
6Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.