DMOS transistor protected against polarity reversal

US6661056B1 · kind B1 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Robert Plikat · Eningen unter Achalm, DE
• Wolfgang Feiler · Reutlingen, DE

Key dates

• Filing date: Sep 26, 2002
• Grant date: Dec 9, 2003
• Expiry date: Sep 26, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

The present invention relates to a circuit configuration for protecting against polarity reversal of a DMOS transistor.A charge carrier zone (30) is provided, situated in the drift zone (14) of DMOS transistor (10), made up of individual partial charge carrier zones (32) situated at a distance from one another and connected to one another in a conducting manner, the charge carrier zone (30) having an opposite charge carrier doping from that of the drift zone (14), and being able to be acted upon by a potential that is negative with respect to a potential present at a drain terminal (24) of the DMOS transistor (10), so that a short-circuit current is prevented.