Memory having plural magnetic layers and a shielding layer
US6661071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2001 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Jun 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.