Patent · US Expired

Dielectric structure

US6661642B2 · kind B2 · utility

12Cited by
12References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 10, 2002
Grant dateDec 9, 2003
Priority date
Expiry dateOct 10, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/692
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.