Method of making a free layer for a spin valve sensor with a lower uniaxial anisotropy field
US6662432B2 · kind B2 · utility
5Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Nov 29, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49067
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the thin film layers. In a further embodiment the free layer is annealed at a high temperature in the presence of a field which is oriented perpendicular to the ABS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.