Method for polishing surface of semiconductor device substrate
US6663468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jul 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.