Gated electron field emitter having an interlayer
US6664721B1 · kind B1 · utility
1Cited by
5References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jul 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J3/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter (10) having improved electron emission properties is provided. Electron-emitting microtip protrusions (14) in an emitter layer (12) are separated from a dielectric layer (18) by an interlayer (16) that prevents substantial mixing of the dielectric (16) and the emitter layer (12) during growth of the dielectric layer (18). A conductive gate electrode layer (20) is deposited on the dielectric layer (18). For carbon-based emitters, aluminum is one of several suitable interlayers between the carbon layer and a silicon dioxide dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.