Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
US6665013B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1999 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | May 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.