Fabricating photodetecting integrated circuits with low cross talk
US6667183B2 · kind B2 · utility
1Cited by
11References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Nov 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
An anti-reflective layer is formed on the sidewalls of metal interconnects in an integrated circuit containing photodetector devices. After fabricating the photodetector devices, the metal interconnects are formed. An anti-reflective layer is formed over the interconnects and is directionally etched so that a portion of the anti-reflective layer remains covering the interconnect sidewalls, thereby reducing optical cross-talk in the photodetector devices due to sidewall reflection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.