Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6667196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.