Method and apparatus for forming deposited film
US6667240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4622
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.