Minimizing coating defects in low dielectric constant films
US6667249B1 · kind B1 · utility
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10References
28Claims
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Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is described. A semiconductor substrate is provided wherein a top surface of the semiconductor substrate may have surface defects. A solvent is coated overlying the top surface of the semiconductor substrate. A low dielectric constant material layer is coated overlying the solvent wherein the solvent covers the surface defects thereby preventing defects in the low dielectric constant material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.