High breakdown voltage semiconductor device
US6667515B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Feb 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A high breakdown voltage semiconductor device includes an active area and a surrounding region. In the active area, a second semiconductor layer of a second conductivity type is formed in a first semiconductor layer of a first conductivity type. A third semiconductor layer of the first conductivity type is formed in the second semiconductor layer. A gate electrode faces through a gate insulating film the second semiconductor layer. A first main electrode is connected to the second and third semiconductor layers. A ring layer of the second conductivity type surrounds the active area at a position in the surrounding region. A first low-resistivity layer is formed in the ring layer and has a resistivity lower than that of the ring layer. The first low-resistivity layer is connected to the first main electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.