Mixed technology microcircuits
US6667519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Sep 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mixed technology microcircuit including a first circuit fabricated on a first layer with a first technology and a second circuit fabricated on a second layer with a second technology. In the illustrative embodiment, the first circuit is fabricated with silicon germanium (SiGe) technology and the second circuit is fabricated with complementary metal-oxide semiconductor (CMOS) technology. In an illustrative application, the first circuit includes a high-speed data receiver and a high-speed data transmitter. In the illustrative implementation, the data receiver includes a line receiver, a data and clock recovery circuit, and a demultiplexer and the data transmitter includes a multiplexer, a data and clock encoding circuit, and a line driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.