Semiconductor devices including resistance elements and fuse elements
US6667537B1 · kind B1 · utility
26Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1998 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may have an insulating layer comprising a silicon oxide film or the like formed so as to cover an entire upper surface of a semiconductor substrate. A resistance element comprising MoSix is formed on the insulating layer. An insulating film is provided on the surface of the semiconductor substrate above the insulating layer. A through-hole is provided in the insulating film located above the resistance element, and an electrode provided above the insulating film is electrically connected to the resistance element through this through-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.