Micro-machining
US6670212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2001 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Aug 19, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18,20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.