HF etching and oxide scale removal
US6670281B2 · kind B2 · utility
6Cited by
16References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1998 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Dec 30, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23G1/025
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Methods for etching or removing oxide scale from a substrate by applying a composition containing a polymer and an effective amount of hydrofluoric acid and maintaining the composition on the substrate until the substrate is etched or the oxide scale is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.