Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials
US6670285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2001 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Mar 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.