Integrated circuit having photodiode device and associated fabrication process
US6670657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.