Ferroelectric data processing device
US6670659B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2000 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Feb 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.