Laser synthesized wide-bandgap semiconductor electronic devices and circuits
US6670693B1 · kind B1 · utility
36Cited by
42References
11Claims
0Family size
Inventor
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser apparatus and methods are disclosed for synthesizing areas of wide-bandgap semi-conductor substrates or thin films, including wide-bandgap semiconductors such as silicon carbide, aluminum nitride, gallium nitride and diamond to produce electronic devices and circuits such as integral electronic circuit and components thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.