Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
US6670990B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1998 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.