Shallow photonic bandgap device
US6671443B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2002 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Feb 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.