Control of oxide layer reaction rates
US6673387B1 · kind B1 · utility
22Cited by
31References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is described for formation of oxide films independent of thickness from precursor films comprising metals, metal oxides, and metal fluorides with properties and structures similar to those previously only obtained in thin films, for example less than about 0.4 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.