Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver
US6673645B2 · kind B2 · utility
2Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2002 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.