Structure and method for planar lateral oxidation in active
US6674090B1 · kind B1 · utility
182Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Dec 27, 1999 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Dec 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.