Bipolar transistor
US6674104B2 · kind B2 · utility
1Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2002 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Nov 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A bipolar transistor having base and collector regions of narrow bandgap semiconductor material and a minority-carrier excluding base contact has a base doping level greater than 1017 cm−3. The transistor has a greater dynamic range, greater AC voltage and power gain-bandwidth products and a lower base access resistance than prior art narrow band-gap bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.