Gate length control for semiconductor chip design
US6674108B2 · kind B2 · utility
0Cited by
9References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2000 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first and second polysilicon areas on a chip. The first polysilicon area corresponds to circuit elements of the semiconductor device. At least some of the first polysilicon corresponds to polysilicon gates. At least some of the second polysilicon area comprises contacts of the semiconductor device. Metal covers the polysilicon contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.