Semiconductor power component and a corresponding manufacturing method

US6674125B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Wolfgang Feiler · Reutlingen, DE
• Robert Plikat · Eningen unter Achalm, DE

Key dates

• Filing date: Apr 10, 2002
• Grant date: Jan 6, 2004
• Expiry date: Apr 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region and partially extends to the front-side surface, a front-side MOS control structure, and a front-side cathode contact, which is connected to the source region and the body region. The drift region includes a first drift region of the second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type. The first drift region is a buried region. The second drift region connects the front-side surface to the first drift region. The third drift region borders on a body region and connects the front side surface to the first drift region. The degree of compensation to be determined from the second and third drift region is greater than one and has a maximum in the area of the side of the third drift region that is facing away from the front-side surface. The present invention also creates a corresponding manufacturing method.