MOS-type solid state imaging device with high sensitivity
US6674470B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/7795
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.