Forming metal nitrides
US6676752B1 · kind B1 · utility
14Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Feb 26, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.