Organic semiconductor device having an oxide layer
US6677607B2 · kind B2 · utility
0Cited by
3References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Feb 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.