Compound semiconductor light emitting device
US6677618B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.