Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6677641B2 · kind B2 · utility
162Cited by
7References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Apr 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes a plurality of charge control electrodes. The one or more charge control electrodes may control the electric field within the drift region of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.