Patent · US Expired

Method of micromechanical manufacturing of a semiconductor element, in particular an acceleration sensor

US6679995B1 · kind B1 · utility

16Cited by

7References

9Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Branko Banjac · Echterdingen, DE
Frank Fischer · Mesa, US
Doris Schielein · Gomaringen, DE
Dirk Bueche · Waldshut-Tiengen, DE

Key dates

Filing date	Dec 18, 2001
Grant date	Jan 20, 2004
Priority date	—
Expiry date	May 28, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG01P2015/0814
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method of micromechanically manufacturing fixed and movable layer-like electrodes of a semiconductor element, for example, a capacitive acceleration sensor, which are exposed over a substrate over a certain area is provided. A sacrificial layer may be arranged between the substrate and the fixed and movable electrodes being removed in an etching step in order to expose the electrodes with respect to the substrate. The thickness of the sacrificial layer located in the area of the fixed electrodes may be less than the thickness of the sacrificial layer located in the area of the movable electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.