ESD protective transistor

US6680493B1 · kind B1 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• Robert Bosch GmbH · DE

Inventors

• Heinrich Wolf · Hailer, DE
• Wolfgang Wilkening · Pfullingen, DE
• Stephan Mettler · Reutlingen, DE

Key dates

• Filing date: Oct 20, 2001
• Grant date: Jan 20, 2004
• Expiry date: Oct 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

An ESD protective transistor comprises a heavily doped p-type base region which is arranged in a lightly doped p-well and which is provided with a first terminal. Furthermore, a heavily doped n-type emitter region is arranged in the lightly doped p-well. A heavily doped n-type collector region is separated from the lightly doped p-well through a lightly doped n-type region and is provided with a second terminal. The heavily doped n-type emitter region is not short-circuited with the heavily doped base region viy a common electrode and is of floating design. The doping types of the respective regions may be reversed.