Interstitial diffusion barrier
US6680497B1 · kind B1 · utility
0Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Sep 22, 2000 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Apr 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
Abstract
A heterojunction bipolar transistor is doped in the sub-collector layer (20) with phosphorus (24). The presence of the phosphorus causes any interstitial gallium (22) to be bonded (26) to the phosphorus (24) and move to a lattice site. The result is that the interstitial gallium does not diffuse to the base layer and thus does not cause the beryllium to be displaced and diffused. Instead of doping with phosphorus, a layer including phosphorus can also be utilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.