Lateral high voltage transistor having spiral field plate and graded concentration doping
US6680515B1 · kind B1 · utility
40Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2000 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Nov 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The drift region has variable dopant concentration between the drain and the gate. In addition, a spiral resistor is placed over the drift region and is connected to the drain and either the gate or the source of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.