MR structures for high areal density reader by using side shields
US6680829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2001 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jun 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/398
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.