Nonvolatile memory for which program operation is optimized by controlling source potential
US6680865B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Mar 18, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile memory, the source potential of a selected cell transistor to be programmed is controlled to be changed in accordance with a distance between a program voltage generator connected to a bit line and to the selected cell transistor. When the distance between the selected cell transistor and the program voltage generator is a first distance, the source potential at the selected cell transistor is controlled to be a first potential, and when the distance between them is a second distance longer than the first distance, the source potential at the selected cell transistor is controlled to be a second potential higher than the first potential. As a result, the drain-source voltage at the selected cell transistor to be programmed can be optimized, and optimization of the programming can be implemented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.