Semiconductor light emitting device and semiconductor laser
US6680959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2001 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jul 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
When a laminated semiconductor portion of nitride based compound semiconductor is formed so as to constitute a portion forming a light emitting layer forming portion on a sapphire substrate, the sapphire substrate has an off orientation angle having a tilt relative to an A axis or a M axis in such a way that 0.2°≦&thgr;={&thgr;a2+&thgr;m2}1/2≦0.3°, wherein 0°≦&thgr;a≦0.3°, 0°≦&thgr;m≦0.3°, when taking the angle tilted relative to the A axis as &thgr;a and to the M axis as &thgr;m, and the foregoing nitride based compound semiconductor layers are laminated onto the surface of the off-oriented C plane. Therefore, it is possible to attain a semiconductor light emitting device having the superior characteristic of light emitting by growing the nitride based compound semiconductor on a sapphire substrate with the degree of flatness high and furthermore to attain a semiconductor laser of a small threshold current by forming a cleavage surface finely while improving the degree of flatness by off-orienting a sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.