Patent · US Expired

Physical vapor deposition targets and methods of formation

US6682636B2 · kind B2 · utility

3Cited by
19References
50Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 30, 2001
Grant dateJan 27, 2004
Priority date
Expiry dateApr 3, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/21
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A method includes combining a solid first material and a solid second material and melting at least a portion of the first material sufficient to coat the second material and any remaining first material. An approximately homogenous distribution of the second material can be formed throughout the liquid phase of the first material. The first material liquid phase can then be solidified to define a composite target blank exhibiting an approximately homogenous distribution of the solid second material in a matrix of the solidified first material. The first material can comprise Se and the second material can comprise Ge. The composite target blank can include at least about 50 vol % matrix. The first and second materials can be powdered metals. Accordingly, a physical vapor deposition target can include a matrix of a first material and an approximately homogenous distribution of particles of a second material throughout the first material matrix. The second material can include powders exhibiting particle sizes no greater than about 325 mesh.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.